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• W2892706598 abstract "An analytical surface-potential-based drain current model of dynamic-depletion (DD) polysilicon (poly-Si) thin-film transistors (TFTs) is proposed in this paper. In the 1-D Poisson equation, total charge density is reformulated by an effective charge density, which allows a closed-form surface potential calculation scheme. Different boundary conditions between partial depletion and full depletion are calculated and unified into one back-gate potential in the DD mode, which allows a unified-form surface potential calculation scheme. Combining with Gauss's theory, we explicitly solve a closed- and unified-form surface potential of DD poly-Si TFTs. Based on the solution of the surface potential, the drain current is derived analytically from the Pao-Sah integration. Furthermore, our solution is verified by numerical results and experimental data, respectively. As a result, such a model can accurately predict I-V characteristics of DD poly-Si TFTs and provide computational efficiency for TFT process optimization and circuit simulations." @default.
• W2892706598 created "2018-10-05" @default.
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• W2892706598 date "2018-11-01" @default.
• W2892706598 modified "2023-10-14" @default.
• W2892706598 title "A Surface-Potential-Based Drain Current Compact Model of Dynamic-Depletion Polysilicon Thin-Film Transistors" @default.
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• W2892706598 doi "https://doi.org/10.1109/ted.2018.2869628" @default.
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