FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2892819934> ?p ?o ?g. }

• W2892819934 abstract "The work reported in this thesis is concerned with the determination of the microwave characteristics and possible applications of Gallium Arsenide Field Effect Transistors at frequencies from 0.1 to 12 GHz.In order to characterise these active devices with reasonable accuracy and consistency the microwave network analyser facility at Warwick has been expanded and developed to give a 2-port, computer corrected, scattering parameter measurement capability. The resulting system has been tailored to the particular needs of GaAs FET characterisation and assessment, by the inclusion of subroutines which enable gain and stability parameters to be displayed in addition to the corrected s-parameters.Various transistor package styles and corresponding test fixtures to enable the active devices to be interfaced with the network analyser have been investigated. Since the device test fixtures have used micro-strip rather than co-axial transmission lines special calibration routines and standards have been developed to enable the computer correction system to be employed for the measurements.Numerous devices have been characterised with the facility developed and the results used to establish the s—parameter characteristics of GaAs FETs at frequencies up to 12GHz. This information has been used to compare the predicted performance of different batches and types of device and in the design of circuits used to assess the actual performance of GaAs FEJTs in certain applications, such as small signal amplifiers and oscillators.Data on the effects of device processing and design changes on microwave performance have been fed back to the device manufacturer to aid optimisation of GaAs FET technology. Such measurements have shown the superior performance of aluminium versus nickel as a gate metallisation identified a weakness in electron beam fabricated devices and confirmed the advantage in using wider gate structures to lower impedances and simplify matching requirements.S-parameter data for packaged FETTs has been used to design amplifier and oscillator circuits which have been realised in order to assess the actual device performance in these applications. A comparison of predicted and measured performance at 3GHz has shown reasonable agreement. A novel tuning technique on micro-strip was used to produce amplifiers at X-Band using chip devices. Using this technique with one micron gate length FETs a high gain (>40dB) amplifier at 11.2GHz was fabricated which confirmed the suitability of GaAs FETs as amplifier devices for such applications as high gain microwave amplifiers in repeater systems. At lower frequencies the GaAs FET has been shown to give excellent noise performance and is superior in this respect to bipolar transistors. The oscillator circuits incorporating GaAs FETTs investigated exhibited two notable characteristics; good D.C. to R.F. conversion efficiency and poor noise and stability performance. The latter however, appears to result from the un-optimised nature of the circuits used.In spite of some remaining unanswered questions, the overall conclusion from this investigation is that GaAs FETs, although relatively new devices (at the time of this study 1971-74) are useful solid state devices for numerous microwave applications. The importance of the GaAs FET in microwave systems has been underlined since the completion of this early study by the tremendous increase in activity in this field to the level seen today." @default.
• W2892819934 created "2018-10-05" @default.
• W2892819934 creator A5007635895 @default.
• W2892819934 date "1980-02-01" @default.
• W2892819934 modified "2023-09-22" @default.
• W2892819934 title "Characterisation and application of microwave field effect transistors" @default.
• W2892819934 hasPublicationYear "1980" @default.
• W2892819934 type Work @default.
• W2892819934 sameAs 2892819934 @default.
• W2892819934 citedByCount "0" @default.
• W2892819934 crossrefType "dissertation" @default.
• W2892819934 hasAuthorship W2892819934A5007635895 @default.
• W2892819934 hasConcept C105795698 @default.
• W2892819934 hasConcept C119599485 @default.
• W2892819934 hasConcept C120665830 @default.
• W2892819934 hasConcept C121332964 @default.
• W2892819934 hasConcept C127413603 @default.
• W2892819934 hasConcept C128450285 @default.
• W2892819934 hasConcept C134146338 @default.
• W2892819934 hasConcept C145598152 @default.
• W2892819934 hasConcept C165801399 @default.
• W2892819934 hasConcept C165838908 @default.
• W2892819934 hasConcept C172385210 @default.
• W2892819934 hasConcept C194257627 @default.
• W2892819934 hasConcept C195266298 @default.
• W2892819934 hasConcept C202444582 @default.
• W2892819934 hasConcept C24326235 @default.
• W2892819934 hasConcept C26834552 @default.
• W2892819934 hasConcept C33923547 @default.
• W2892819934 hasConcept C41008148 @default.
• W2892819934 hasConcept C44838205 @default.
• W2892819934 hasConcept C46362747 @default.
• W2892819934 hasConcept C76155785 @default.
• W2892819934 hasConcept C9652623 @default.
• W2892819934 hasConceptScore W2892819934C105795698 @default.
• W2892819934 hasConceptScore W2892819934C119599485 @default.
• W2892819934 hasConceptScore W2892819934C120665830 @default.
• W2892819934 hasConceptScore W2892819934C121332964 @default.
• W2892819934 hasConceptScore W2892819934C127413603 @default.
• W2892819934 hasConceptScore W2892819934C128450285 @default.
• W2892819934 hasConceptScore W2892819934C134146338 @default.
• W2892819934 hasConceptScore W2892819934C145598152 @default.
• W2892819934 hasConceptScore W2892819934C165801399 @default.
• W2892819934 hasConceptScore W2892819934C165838908 @default.
• W2892819934 hasConceptScore W2892819934C172385210 @default.
• W2892819934 hasConceptScore W2892819934C194257627 @default.
• W2892819934 hasConceptScore W2892819934C195266298 @default.
• W2892819934 hasConceptScore W2892819934C202444582 @default.
• W2892819934 hasConceptScore W2892819934C24326235 @default.
• W2892819934 hasConceptScore W2892819934C26834552 @default.
• W2892819934 hasConceptScore W2892819934C33923547 @default.
• W2892819934 hasConceptScore W2892819934C41008148 @default.
• W2892819934 hasConceptScore W2892819934C44838205 @default.
• W2892819934 hasConceptScore W2892819934C46362747 @default.
• W2892819934 hasConceptScore W2892819934C76155785 @default.
• W2892819934 hasConceptScore W2892819934C9652623 @default.
• W2892819934 hasLocation W28928199341 @default.
• W2892819934 hasOpenAccess W2892819934 @default.
• W2892819934 hasPrimaryLocation W28928199341 @default.
• W2892819934 hasRelatedWork W114570958 @default.
• W2892819934 hasRelatedWork W1500094771 @default.
• W2892819934 hasRelatedWork W1596681098 @default.
• W2892819934 hasRelatedWork W1913509363 @default.
• W2892819934 hasRelatedWork W1965760552 @default.
• W2892819934 hasRelatedWork W1970107871 @default.
• W2892819934 hasRelatedWork W1971983895 @default.
• W2892819934 hasRelatedWork W2018519785 @default.
• W2892819934 hasRelatedWork W2040932251 @default.
• W2892819934 hasRelatedWork W2081732672 @default.
• W2892819934 hasRelatedWork W2135851999 @default.
• W2892819934 hasRelatedWork W2143408060 @default.
• W2892819934 hasRelatedWork W2156112066 @default.
• W2892819934 hasRelatedWork W28408124 @default.
• W2892819934 hasRelatedWork W3176073251 @default.
• W2892819934 hasRelatedWork W3208295196 @default.
• W2892819934 hasRelatedWork W58158284 @default.
• W2892819934 hasRelatedWork W987193539 @default.
• W2892819934 hasRelatedWork W2181533108 @default.
• W2892819934 hasRelatedWork W347158371 @default.
• W2892819934 isParatext "false" @default.
• W2892819934 isRetracted "false" @default.
• W2892819934 magId "2892819934" @default.
• W2892819934 workType "dissertation" @default.