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• W2892870111 endingPage "101002" @default.
• W2892870111 startingPage "101002" @default.
• W2892870111 abstract "We present the electrical characterization of N-polar AlN layers grown by metal–organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal–semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing a high buffer leakage current. The silicon concentration decreases from 2 × 1018 to 9 × 1015 cm−3 with decreasing growth temperature, reducing the buffer leakage current to 5.6 nA/mm at a 100 V bias. The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6 × 104 owing to the low leakage of AlN buffer layers." @default.
• W2892870111 created "2018-10-05" @default.
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• W2892870111 date "2018-09-25" @default.
• W2892870111 modified "2023-10-18" @default.
• W2892870111 title "N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications" @default.
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• W2892870111 doi "https://doi.org/10.7567/apex.11.101002" @default.
• W2892870111 hasPublicationYear "2018" @default.
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