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- W2892955846 abstract "VTH subthreshold hysteresis measured in commercially available 4H-SiC MOSFET is more pronounced in trench than in planar ones. All planar devices from different manufacturers exhibit an inverse temperature dependence, with the hysteresis amplitude reducing as the temperature increases, whereas all trench devices from different manufacturers exhibit the opposite behaviour. A physical interpretation is proposed, based on experimental evidence, which demonstrates that temperature dependence of the VTH subthreshold hysteresis is related to the technology. The findings are relevant to the ongoing discussion on SiC bespoke validation standards development and contribute important new insight." @default.
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- W2892955846 date "2018-09-01" @default.
- W2892955846 modified "2023-10-09" @default.
- W2892955846 title "V subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs" @default.
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- W2892955846 doi "https://doi.org/10.1016/j.microrel.2018.06.047" @default.
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