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• W2892956132 abstract "Novel Al2O3-dielectric InAlN/AlN/GaN ${Gamma }$ -Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al2O3/TiO2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively, are investigated. The ${Gamma }$ -gate includes a 1- ${mu }text{m}$ long active gate on the Al2O3 dielectric and a 1- ${mu }text{m}$ long field-plate on the composite Al2O3/TiO2 oxides. The present ${Gamma }$ -Gate MOS-HFET has demonstrated excellent on/off current ratio ( $I_{mathrm{ on}}/I_{mathrm{ off}}$ ) of $8.2 times 10^{10}$ , subthreshold swing of 102.3 mV/dec, maximum extrinsic transconductance of ( $g_{m,{mathrm{ max}}}$ ) of 210.1 mS/mm, maximum drain-source saturation current density ( $I_{mathrm{ DS,max}}$ ) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of −311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at $V_{mathrm{ GS}}= -10$ V, and power-added efficiency of 39.9% at 2.4 GHz. A conventional Schottky-gate HFET and TiO2-dielectric MOS-HFET were also prepared in comparison. The present design has shown superior dc/RF device performance. It is suitable for high-power RF circuit applications." @default.
• W2892956132 created "2018-10-05" @default.
• W2892956132 creator A5053109827 @default.
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• W2892956132 date "2018-01-01" @default.
• W2892956132 modified "2023-10-18" @default.
• W2892956132 title "Al₂O₃-Dielectric InAlN/AlN/GaN ${Gamma}$ -Gate MOS-HFETs With Composite Al₂O₃/TiO₂ Passivation Oxides" @default.
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• W2892956132 doi "https://doi.org/10.1109/jeds.2018.2870844" @default.
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