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• W2893045576 abstract "In this letter, an off-state stress is proposed to simulate the operation conditions of switching polycrystalline thin-film transistors in active-matrix displays for the first time. A dynamic hot carrier (HC) effect, dependent on data pulse falling time, dominates the device degradation. Incorporated with the transient simulations, the device degradation mechanism is tentatively discussed. Finally, a bridged-grain structure, which can effectively shares the stress voltage drop via multiple reverse junctions, is employed to relieve such off-state-stress-induced dynamic HC degradation." @default.
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• W2893045576 date "2018-11-01" @default.
• W2893045576 modified "2023-10-16" @default.
• W2893045576 title "OFF-State-Stress-Induced Instability in Switching Polycrystalline Silicon Thin-Film Transistors and Its Improvement by a Bridged-Grain Structure" @default.
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• W2893045576 doi "https://doi.org/10.1109/led.2018.2872350" @default.
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