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- W2893200554 abstract "This paper presents the detailed physical insights into the silicon-controlled rectifier (SCR) phenomena in planar equivalent Fin SCR devices. The complexity and roadblocks for SCR triggering in FinFET technology are explored. Implication of contact silicidation on Fin SCR turn-ON is discussed in detail. Device design approaches are discussed for efficient Fin-enabled SCRs. In this direction, a novel contact engineering scheme in Fin technology is disclosed for improved SCR action. Moreover, a novel Fin SCR is presented, which offers area-efficient electrostatic discharge current carrying capability." @default.
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- W2893200554 date "2018-11-01" @default.
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- W2893200554 title "Challenges & Physical Insights Into the Design of Fin-Based SCRs and a Novel Fin-SCR for Efficient On-Chip ESD Protection" @default.
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- W2893200554 doi "https://doi.org/10.1109/ted.2018.2869630" @default.
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