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• W2893398846 abstract "We propose a novel two-dimensional (2D) SnP3 crystal that possesses low indirect band gaps of 0.67 eV (monolayer) and 1.03 eV (bilayer) and high kinetic and thermal stability until 500 K. The 2D SnP3 shows strong interlayer quantum confinement effects, resulting in a band gap increase from mono- to bilayer, and then a band gap decrease from bi- to triple layer leading to a semiconductor–metal transition. Monolayer SnP3 has large hole mobility (992 cm2 V–1 s–1), whereas bilayer SnP3 has high electron mobility (8002 cm2 V–1 s–1) which is comparable to that of phosphorene. The static dielectric constants of mono- and bilayer SnP3 are 3.21 and 5.24, respectively. Both monolayer and bilayer SnP3 show strong light absorption in the visible and ultraviolet regions. The indirect band gap of monolayer SnP3 decreases under biaxial compressive strain and increases under biaxial tensile strain. Especially, when the biaxial compressive strain reaches to 6%, monolayer SnP3 has a transition from semiconductor to metal. ..." @default.
• W2893398846 created "2018-10-05" @default.
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• W2893398846 date "2018-09-27" @default.
• W2893398846 modified "2023-09-24" @default.
• W2893398846 title "Novel Two-Dimensional Semiconductor SnP₃ with High Carrier Mobility, Good Light Absorption, and Strong Interlayer Quantum Confinement" @default.
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• W2893398846 doi "https://doi.org/10.1021/acs.jpcc.8b06211" @default.
• W2893398846 hasPublicationYear "2018" @default.
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