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- W2893494472 abstract "Using scalable solution processing, layered gallium telluride (GaTe) nanoflake dispersions are produced in surfactant-free, low-boiling-point, water–ethanol cosolvent mixtures. During exfoliation, chemical degradation of the ambient-reactive GaTe crystals is minimized by using deoxygenated solvents in a sealed tip ultrasonication system. The structural and chemical integrity of the solution-processed GaTe nanoflakes is subsequently confirmed with a comprehensive suite of microscopic and spectroscopic analyses. Furthermore, field-effect transistors and phototransistors based on individual solution-processed GaTe nanoflakes show electronic and optoelectronic properties, respectively, that are comparable to micromechanically exfoliated GaTe. Minimal solution-processing residues from the surfactant-free, low-boiling-point cosolvent dispersion medium coupled with the high intrinsic hole doping of GaTe produces the highest electrical conductivity among solution-processed layered nanoflake thin films without pos..." @default.
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- W2893494472 date "2018-09-25" @default.
- W2893494472 modified "2023-10-17" @default.
- W2893494472 title "Solution-Processed Layered Gallium Telluride Thin-Film Photodetectors" @default.
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- W2893494472 doi "https://doi.org/10.1021/acsphotonics.8b01066" @default.
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