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• W2893552001 abstract "In this letter, a new method for obtaining dynamic hysteresis in flexible thienoacene-based diodes is reported. A major strategy lies in the incorporation of a polymeric interlayer for dual purposes: the polarity inversion and memory effect. It is discovered that the proposed interface engineering transforms a regular organic diode into an efficient self-rectifying memristor, a highly desirable element for emerging neuromorphic applications. An electrical reconfiguration mechanism based on the field behavior at the blocking junction is conceptualized as a guideline for research on related materials and devices." @default.
• W2893552001 created "2018-10-05" @default.
• W2893552001 creator A5084900880 @default.
• W2893552001 date "2018-11-01" @default.
• W2893552001 modified "2023-10-17" @default.
• W2893552001 title "Self-Rectifying DNTT Memristors" @default.
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• W2893552001 doi "https://doi.org/10.1109/led.2018.2871847" @default.
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