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- W2893616744 abstract "We demonstrate that HfO<sub>2</sub>, a high-K dielectric, can be prepared on the top surface of 2D HfS<sub>2</sub> through plasma oxidation, which results in a heterostructure composed of a 2D van der Waals semiconductor and its insulating native oxide." @default.
- W2893616744 created "2018-10-05" @default.
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- W2893616744 date "2018-01-01" @default.
- W2893616744 modified "2023-10-17" @default.
- W2893616744 title "HfO<sub>2</sub>/HfS<sub>2</sub> hybrid heterostructure fabricated <i>via</i> controllable chemical conversion of two-dimensional HfS<sub>2</sub>" @default.
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- W2893616744 doi "https://doi.org/10.1039/c8nr06020g" @default.
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