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- W2893698997 abstract "In this work, the fabrication of HfO 2 insulating film on Si-based GaN epi-layer by RF sputter is studied. The effects of substrate temperature and different post-annealing treatments on the insulation properties of the HfO 2 films were investigated. With optimized the processing parameters, the breakdown field of HfO 2 film with 3.5 MV/cm is achieved, the leakage current is only 1.4×10−7 A/cm2at the electrical field of 2 MV/cm, which has reach the published average and has satisfied the requirements of MOSFET." @default.
- W2893698997 created "2018-10-05" @default.
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- W2893698997 date "2018-05-01" @default.
- W2893698997 modified "2023-09-25" @default.
- W2893698997 title "Fabrication and Insulation Properties of GaN Based HfO<inf>2</inf> Film" @default.
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- W2893698997 doi "https://doi.org/10.1109/imcec.2018.8469254" @default.
- W2893698997 hasPublicationYear "2018" @default.
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