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• W2893720735 abstract "This paper presents a behavioral model for a Si/Si1− x Ge x multi-quantum well (MQW) detector that predicts device characteristics to investigate the effect of increasing Ge content in Si/Si1− x Ge x MQW. The modeling approach in this paper is based on a physical instead of empirical approach, which allows to obtain a predictive behavioral analysis of high Ge content with only a few fitting parameters. The model is used to simulate device transfer characteristics with respect to various amounts of Ge content used for Si1− x Ge x layer in MQW. The simulation results of the proposed model are validated with the experimental data. The simulated and the experimental data are consistent over a wide range of Ge content varied from 30% up to 50%. The primary objective of this paper is to optimize Ge content in the Si/Si1− x Ge x MQW detector to achieve desired thermal sensitivity measured in terms of temperature coefficient of resistance for a potential microbolometer application. This is the first study in the literature to develop such a highly predictive behavioral model of a Ge-enriched Si/Si1− x Ge x MQW. The study also presents the effect of including the carbon delta layers at the Si/Si1− x Ge x heterointerface on the device transfer characteristics. The effect of Ge content on the overall noise is also investigated by the noise characterization of the test devices." @default.
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• W2893720735 date "2018-01-01" @default.
• W2893720735 modified "2023-09-26" @default.
• W2893720735 title "A Behavioral Model for High Ge Content in Si/Si1-xGex Multi-Quantum Well Detector" @default.
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• W2893720735 doi "https://doi.org/10.1109/jsen.2018.2865033" @default.
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