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• W2893739257 abstract "In this letter, we report the achievement of a high-performance lateral GaN Schottky barrier diode (SBD) on a silicon substrate with a low turn- ON voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{ mathrm{ON}}$ </tex-math></inline-formula> ) of 0.35 V and tungsten (W) as the anode. Non-field-plated lateral GaN SBDs with the anode–cathode distances ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${L}_{text {AC}}$ </tex-math></inline-formula> ) of 6, 10, 15, 20, and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$25~mu text{m}$ </tex-math></inline-formula> demonstrate the reverse breakdown voltages of 0.6, 1.1, 1.25, 1.5, and 1.9 kV with the differential specific ON-resistances ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${R}_{text{ON}, text {sp}}$ </tex-math></inline-formula> ) of 0.38, 0.72, 1.23, 1.87, and 2.61 <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$text{m}Omega cdot $ </tex-math></inline-formula> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> , respectively. The power figure-of-merit (FOM) is calculated to be <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$ {1}times 10^{ {3}}$ </tex-math></inline-formula> , <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$ {1.7}times {10}^{ {3}}$ </tex-math></inline-formula> , <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$ {1.3}times {10}^{ {3}}$ </tex-math></inline-formula> , <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$ {1.2}times {10}^{ {3}}$ </tex-math></inline-formula> , and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$ {1.4}times {10}^{{3}}$ </tex-math></inline-formula> MW/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> . To the best of our knowledge, this FOM of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${1.7}times {10}^{{3}}$ </tex-math></inline-formula> MW/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> is the highest among all the lateral GaN SBDs on a Si substrate. Combined with the ~10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>8</sup> current ON/OFF ratio at room temperature, the GaN SBD with the W anode shows a great promise for next-generation power electronics." @default.
• W2893739257 created "2018-10-05" @default.
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• W2893739257 date "2018-01-01" @default.
• W2893739257 modified "2023-09-25" @default.
• W2893739257 title "A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V" @default.
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• W2893739257 doi "https://doi.org/10.1109/led.2018.2864874" @default.
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