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• W2893829856 endingPage "33772" @default.
• W2893829856 startingPage "33768" @default.
• W2893829856 abstract "We fabricate a Pt/Ag:SiO xN y/Ti programmable metallization cell exhibiting bidirectional threshold switching (TS) or nonvolatile resistive switching (RS) characteristics through a simple thermal annealing process. The cell composed of pristine Ag:SiO xN y layers showed self-limiting TS characteristics with high selectivity and extremely low OFF currents, whereas the same cell showed typical RS characteristics after thermal annealing at 250 °C. The operating mechanism was investigated using scanning transmission electron microscopy and X-ray photoelectron spectroscopy. Next, a Ag:SiO xN y-based one selector-one resistor device was fabricated by employing both TS and RS characteristics in a single cell, which exhibited excellent self-rectifying memory performance." @default.
• W2893829856 created "2018-10-05" @default.
• W2893829856 creator A5048152794 @default.
• W2893829856 creator A5048745206 @default.
• W2893829856 creator A5053171084 @default.
• W2893829856 date "2018-09-27" @default.
• W2893829856 modified "2023-09-24" @default.
• W2893829856 title "Ag:SiO_<i>x</i>N_<i>y</i>-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application" @default.
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• W2893829856 doi "https://doi.org/10.1021/acsami.8b12385" @default.
• W2893829856 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/30259727" @default.
• W2893829856 hasPublicationYear "2018" @default.
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