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- W2894565239 abstract "Over the past 10 years, activities in negative capacitance field-effect transistors (NCFETs) have gained deep roots in materials science and physics of negative capacitance, device engineering, modeling, and simulation and large-scale circuit and system performance analysis. This chapter discusses the selection of these activities. In explaining the operation of an NCFET, the two most important questions that need to be addressed are: how a negative capacitance gate oxide reduces the subthreshold swing, and how mechanisms in a certain class of materials called ferroelectrics can result in an effective differential negative capacitance. To understand how the unstable negative capacitance states in a ferroelectric capacitor can be accessed, the chapter presents the energy landscape picture of its switching dynamics. The modular structure provides interesting opportunities for understanding the physics of operation of NCFETs, while the integrated structures are essential for wafer-scale integration of NCFETs." @default.
- W2894565239 created "2018-10-12" @default.
- W2894565239 creator A5049163544 @default.
- W2894565239 date "2018-10-05" @default.
- W2894565239 modified "2023-09-26" @default.
- W2894565239 title "Energy-Efficient Computing with Negative Capacitance" @default.
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- W2894565239 doi "https://doi.org/10.1002/9783527811861.ch7" @default.
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