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- W2894580405 abstract "Solid solutions of the wide-band-gap semiconductors ZnO and GaN hold great promise for diverse optoelectronic applications, including photocatalysis, photovoltaics, and light-emitting diodes. However, the difficulty of synthesizing single-crystalline samples of these alloys thwarts a deeper understanding of their physics. The authors develop a technique for low-temperature epitaxy to solve this problem, and present a systematic investigation of the optical properties and electronic structure of the system. This epitaxy technique could be used to fabricate high-quality alloys or superlattices of various oxynitride systems for advanced optoelectronics." @default.
- W2894580405 created "2018-10-12" @default.
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- W2894580405 date "2018-10-01" @default.
- W2894580405 modified "2023-10-16" @default.
- W2894580405 title "Epitaxy of <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline overflow=scroll><mml:mo stretchy=false>(</mml:mo><mml:mi>Ga</mml:mi><mml:mrow><mml:mrow><mml:mi mathvariant=normal>N</mml:mi></mml:mrow></mml:mrow><mml:msub><mml:mo stretchy=false>)</mml:mo><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mo stretchy=false>(</mml:mo><mml:mi>Zn</mml:mi><mml:mrow><mml:mrow><mml:mi mathvariant=normal>O</mml:mi></mml:mrow></mml:…" @default.
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- W2894580405 doi "https://doi.org/10.1103/physrevapplied.10.044001" @default.
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