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• W2894614569 abstract "This chapter presents the general background on silicon carbide as a functional semiconductor for sensors operating in harsh environments. The fundamental stacking orders of different SiC polytypes with common growth methods and conditions are introduced, with a focus on cubic silicon carbide (3C-SiC) and hexagonal silicon carbide (e.g. 4H-SiC and 6H-SiC). This chapter also introduces the thermoelectrical effect in SiC with respect to sensing properties at high temperatures. The importance of SiC materials with a wide range of applications in harsh environments will be mentioned." @default.
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• W2894614569 date "2018-01-01" @default.
• W2894614569 modified "2023-09-26" @default.
• W2894614569 title "Introduction to SiC and Thermoelectrical Properties" @default.
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• W2894614569 doi "https://doi.org/10.1007/978-981-13-2571-7_1" @default.
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