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- W2894790022 abstract "The terahertz frequency range is the region of the electromagnetic spectrum lying between the microwaves and the infrared. This chapter reviews the state of the art of terahertz technology and discusses progress and perspectives of gallium nitride (GaN) and GaN-based devices toward terahertz applications. It introduces the topic of terahertz technology and provides an overview of applications, devices, and challenges. The chapter discusses the materials properties of GaN and gives an overview of the charge-transport mechanisms relevant to terahertz applications in this material. It provides an overview of the state of the art in terms of GaN-based terahertz devices, including high electron mobility transistors (HEMTs), negative differential resistance (NDR) devices, quantum cascade lasers (QCLs), and electron-plasma-wave-based devices. The future perspectives and limitations of the GaN-based terahertz devices are also discussed." @default.
- W2894790022 created "2018-10-12" @default.
- W2894790022 creator A5061332224 @default.
- W2894790022 date "2018-10-05" @default.
- W2894790022 modified "2023-09-26" @default.
- W2894790022 title "Terahertz Properties and Applications of GaN" @default.
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- W2894790022 doi "https://doi.org/10.1002/9783527811861.ch9" @default.
- W2894790022 hasPublicationYear "2018" @default.
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