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- W2894816130 abstract "Among the new generations of subthermionic transistors, tunnel-field-effect transistors (TFETs) are highly promising as they are less disruptive and offer integrability with CMOS process. This chapter schematically illustrates the working principle of TFETs. To design an efficient TFET, several factors must be taken into consideration. The chapter discusses the design consideration in fabrication of TFETs. It establishes the supremacy of the TFET biosensor compared to that based on CFETs. The chapter presents extensive numerical simulations based on nonequilibrium Green's function formalism for accurate results as well as analytical solutions with the aim of providing easy physical insights. It illustrates that TFET biosensors not only lead to a substantial increase in sensitivity but also provide significant improvement in terms of the response time, which is defined as the time required to obtain a desired sensitivity." @default.
- W2894816130 created "2018-10-12" @default.
- W2894816130 creator A5047237761 @default.
- W2894816130 date "2018-10-05" @default.
- W2894816130 modified "2023-09-26" @default.
- W2894816130 title "Tunnel Field-Effect Transistors" @default.
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- W2894816130 doi "https://doi.org/10.1002/9783527811861.ch6" @default.
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