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• W2894850082 abstract "In this report, we demonstrated a reliable switching effect of carbon nanotube (CNT) field-effect transistor (FET) devices integrated with 99% semiconducting CNT as a channel and high-k oxide as the dielectric. CNT FET devices with high-k oxides of Al-ZrHfO 2 and Al 2 O 3 were electrically characterized and compared. There was no considerable hysteresis in the Al 2 O 3 -based CNT FET device. The Al-ZrHfO 2 with a tetragonal phase-based high dielectric constant (~47), designed by an atomic layer deposition process, showed a reliable switching effect as well as low operation voltage (<±3 V). Charge trapping/detrapping process via oxygen vacancy-related defects of Al-ZrHfO 2 was proposed as a primary mechanism to explain a current change of a counterclockwise direction and threshold voltage (V th ) shift for transfer properties. The suggested charge trapping model within bulk oxide was experimentally proven since the hysteresis from the adsorption/desorption of gas molecules to CNT surface was negligible. Endurance characteristics of the CNT switching devices remained stable without any serious current fluctuation during a repetitive cycling test. The memory device with reliable switching properties as well as low operation power would pave a road toward next-generation memory components of portable electronic gadgets." @default.
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• W2894850082 date "2018-10-08" @default.
• W2894850082 modified "2023-10-17" @default.
• W2894850082 title "Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO₂ Gate Dielectric" @default.
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• W2894850082 doi "https://doi.org/10.1155/2018/2156895" @default.
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