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• W2894856511 abstract "In this letter, partial recessed-gate Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> /AlGaN/GaN MISFET is experimentally demonstrated based on selective-area growth. The device features different contents of Al in the AlGaN barriers that were grown in the recessed and accessed regions that contributed to a higher V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> and lower ON-resistance. As a result, it achieves a positive shift in V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> as compared to the reference (from 1.8 to 2.5 V). Besides, this method accomplished the highest reported peak μ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>FE</sub> value of 2033 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V · s and a lower gate channel sheet resistance of 519 Ω/□ (access region, R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sh</sub> of 418 Ω/□) owing to reserving damage-free AlGaN/GaN hetero-structure in the recessed-gate. Notably, the formed device also exhibits a low hysteresis, low gate leakage, and a slight current collapse." @default.
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• W2894856511 date "2018-11-01" @default.
• W2894856511 modified "2023-10-05" @default.
• W2894856511 title "High-Mobility Normally OFF Al₂O₃/AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure" @default.
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• W2894856511 doi "https://doi.org/10.1109/led.2018.2872637" @default.
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