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• W2894873883 abstract "SiC has immense potential as the semiconductor for future high power metal–oxide–semiconductor devices. X-ray photoelectron spectroscopy (XPS) to systematically study the 4H-SiC/SiO₂ interface after high temperature nitridation treatments in a variety of atmospheres." @default.
• W2894873883 created "2018-10-12" @default.
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• W2894873883 date "2018-01-01" @default.
• W2894873883 modified "2023-09-28" @default.
• W2894873883 title "Interface chemistry and electrical characteristics of 4H-SiC/SiO₂ after nitridation in varying atmospheres" @default.
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• W2894873883 doi "https://doi.org/10.1039/c8tc02935k" @default.
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