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• W2894901220 abstract "A fully dry and hydrofluoric-free low-temperature process has been developed to passivate n-type crystalline silicon (c-Si) surfaces. Particularly, the use of a hydrogen (H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) plasma treatment followed by in situ intrinsic hydrogenated amorphous silicon (a-Si:H) deposition has been investigated. The impact of H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> gas flow rate and H2 plasma processing time on the a-Si:H/c-Si interface passivation quality is studied. Optimal H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> plasma processing conditions result in the best effective minority carrier lifetime of up to 2.5 ms at an injection level of 1 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>15</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> , equivalent to the best effective surface recombination velocity of 4 cm/s. The reasons that enable such superior passivation quality are discussed in this paper based on the characterization of the a-Si:H/c-Si interface and c-Si substrate using transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy, and deep-level transient spectroscopy." @default.
• W2894901220 created "2018-10-12" @default.
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• W2894901220 date "2018-11-01" @default.
• W2894901220 modified "2023-10-16" @default.
• W2894901220 title "Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by <italic>In Situ</italic> a-Si:H Deposition" @default.
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• W2894901220 doi "https://doi.org/10.1109/jphotov.2018.2871329" @default.
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