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• W2894985001 endingPage "54" @default.
• W2894985001 startingPage "48" @default.
• W2894985001 abstract "Abstract Specular m-plane (10 1 ¯ 0) gallium nitride (m-GaN) epi-layer are grown on m-plane (10 1 ¯ 0) sapphire substrates by metal organic chemical vapor deposition using a three-step approach. A two-step approach was used to grow m-GaN buffer layer (BL), while a three-step approach was applied to improve the surface morphology of the top m-GaN epi-layer at high temperature. The three-step approach started with growing m-aluminum nitride nucleation layer with an optimized ammonia flux during the growth of aluminum nitride. Then the temperature was ramped up during the recrystallization step before the m-GaN BL deposition at low-temperature and the growth of m-GaN layer at high-temperature for the final step. Unexpectedly, when ammonia flow was intentionally halted during the recrystallization step, the surface morphology of the BL drastically changed from three- to two- dimensional with an abrupt cross-sectional structure. This in turn facilitated the complete coalescence of the m-GaN layer as revealed by field emission scanning electron microscopy. The three-step technique was found to affect the quality of m-GaN epi-layer as the samples exhibit improved crystallinity with X-ray diffraction rocking curves widths of 4680 and 1980 arcsec along the azimuth, perpendicular and parallel to [10 1 ¯ 0] directions, respectively." @default.
• W2894985001 created "2018-10-12" @default.
• W2894985001 creator A5000362051 @default.
• W2894985001 creator A5015447223 @default.
• W2894985001 creator A5053619357 @default.
• W2894985001 creator A5068254203 @default.
• W2894985001 creator A5071446975 @default.
• W2894985001 creator A5071980104 @default.
• W2894985001 creator A5074020276 @default.
• W2894985001 creator A5079173792 @default.
• W2894985001 creator A5084291587 @default.
• W2894985001 date "2018-12-01" @default.
• W2894985001 modified "2023-09-23" @default.
• W2894985001 title "Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology" @default.
• W2894985001 cites W1968012032 @default.
• W2894985001 cites W1969474079 @default.
• W2894985001 cites W1994063395 @default.
• W2894985001 cites W2000419672 @default.
• W2894985001 cites W2005911633 @default.
• W2894985001 cites W2012560180 @default.
• W2894985001 cites W2024836767 @default.
• W2894985001 cites W2025485196 @default.
• W2894985001 cites W2041456275 @default.
• W2894985001 cites W2042034674 @default.
• W2894985001 cites W2050080762 @default.
• W2894985001 cites W2061637387 @default.
• W2894985001 cites W2070047651 @default.
• W2894985001 cites W2073141057 @default.
• W2894985001 cites W2073906967 @default.
• W2894985001 cites W2076115758 @default.
• W2894985001 cites W2127628584 @default.
• W2894985001 cites W2129051596 @default.
• W2894985001 cites W2138308105 @default.
• W2894985001 cites W2171005862 @default.
• W2894985001 cites W219236780 @default.
• W2894985001 cites W2270308300 @default.
• W2894985001 cites W2793405350 @default.
• W2894985001 doi "https://doi.org/10.1016/j.tsf.2018.09.052" @default.
• W2894985001 hasPublicationYear "2018" @default.
• W2894985001 type Work @default.
• W2894985001 sameAs 2894985001 @default.
• W2894985001 citedByCount "5" @default.
• W2894985001 countsByYear W28949850012021 @default.
• W2894985001 countsByYear W28949850012022 @default.
• W2894985001 countsByYear W28949850012023 @default.
• W2894985001 crossrefType "journal-article" @default.
• W2894985001 hasAuthorship W2894985001A5000362051 @default.
• W2894985001 hasAuthorship W2894985001A5015447223 @default.
• W2894985001 hasAuthorship W2894985001A5053619357 @default.
• W2894985001 hasAuthorship W2894985001A5068254203 @default.
• W2894985001 hasAuthorship W2894985001A5071446975 @default.
• W2894985001 hasAuthorship W2894985001A5071980104 @default.
• W2894985001 hasAuthorship W2894985001A5074020276 @default.
• W2894985001 hasAuthorship W2894985001A5079173792 @default.
• W2894985001 hasAuthorship W2894985001A5084291587 @default.
• W2894985001 hasConcept C127313418 @default.
• W2894985001 hasConcept C127413603 @default.
• W2894985001 hasConcept C151730666 @default.
• W2894985001 hasConcept C171250308 @default.
• W2894985001 hasConcept C185592680 @default.
• W2894985001 hasConcept C191897082 @default.
• W2894985001 hasConcept C192562407 @default.
• W2894985001 hasConcept C2779227376 @default.
• W2894985001 hasConcept C2816523 @default.
• W2894985001 hasConcept C42360764 @default.
• W2894985001 hasConcept C499950583 @default.
• W2894985001 hasConcept C544153396 @default.
• W2894985001 hasConcept C57410435 @default.
• W2894985001 hasConcept C64297162 @default.
• W2894985001 hasConceptScore W2894985001C127313418 @default.
• W2894985001 hasConceptScore W2894985001C127413603 @default.
• W2894985001 hasConceptScore W2894985001C151730666 @default.
• W2894985001 hasConceptScore W2894985001C171250308 @default.
• W2894985001 hasConceptScore W2894985001C185592680 @default.
• W2894985001 hasConceptScore W2894985001C191897082 @default.
• W2894985001 hasConceptScore W2894985001C192562407 @default.
• W2894985001 hasConceptScore W2894985001C2779227376 @default.
• W2894985001 hasConceptScore W2894985001C2816523 @default.
• W2894985001 hasConceptScore W2894985001C42360764 @default.
• W2894985001 hasConceptScore W2894985001C499950583 @default.
• W2894985001 hasConceptScore W2894985001C544153396 @default.
• W2894985001 hasConceptScore W2894985001C57410435 @default.
• W2894985001 hasConceptScore W2894985001C64297162 @default.
• W2894985001 hasFunder F4320321147 @default.
• W2894985001 hasFunder F4320322604 @default.
• W2894985001 hasLocation W28949850011 @default.
• W2894985001 hasOpenAccess W2894985001 @default.
• W2894985001 hasPrimaryLocation W28949850011 @default.
• W2894985001 hasRelatedWork W1549193999 @default.
• W2894985001 hasRelatedWork W2356201124 @default.
• W2894985001 hasRelatedWork W2383787235 @default.
• W2894985001 hasRelatedWork W2514038849 @default.
• W2894985001 hasRelatedWork W2620331613 @default.
• W2894985001 hasRelatedWork W2739008337 @default.
• W2894985001 hasRelatedWork W2896880581 @default.
• W2894985001 hasRelatedWork W2909146734 @default.
• W2894985001 hasRelatedWork W3039764785 @default.
• W2894985001 hasRelatedWork W4232704457 @default.

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