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• W2895040372 abstract "Significant threshold voltage Vth shifts are observed during 10-keV X-ray irradiation of AlGaN/GaN high-electron mobility transistors (HEMTs). Shifts are much smaller for lower dose-rate Cs-137 irradiation than that for higher dose-rate X-ray irradiation. This occurs because hydrogen transport and interactions with defects and impurities in these crystalline wide bandgap semiconductor materials differ fundamentally from those in amorphous SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> . The electric field is also higher in GaN-based HEMTs than in bipolar base oxides. The absence of enhanced low-dose-rate sensitivity in these devices simplifies testing of GaN-based HEMTs for space applications. No significant X-ray-induced V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> shifts are observed in development stage InAlN/GaN HEMTs." @default.
• W2895040372 created "2018-10-12" @default.
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• W2895040372 date "2019-01-01" @default.
• W2895040372 modified "2023-09-30" @default.
• W2895040372 title "Dose-Rate Dependence of the Total-Ionizing-Dose Response of GaN-Based HEMTs" @default.
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• W2895040372 doi "https://doi.org/10.1109/tns.2018.2873059" @default.
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