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• W2895581359 abstract "Photon absorber layer plays a crucial role in inorganic photovoltaic solar cells. Forachieving high efficiency with less material usage, absorber layer should be a directband gap material with large absorption coefficient. Among all direct band gapinorganic thin film solar cells, CIGS based solar cell has achieved the maximumefficiency of 22.6% at lab scale. Toxic nature and less availability of its constituentsin earth crust’s limit its large scale utilization, and thus solar cells based on kesteritemineral structure, like Cu2ZnSn(SxSe1-x)4 (CZTSSe) have gained interest in theemerging thin-film solar cell research field. Cu2ZnSn(SxSe1-x)4 (CZTSSe), aquaternary chalcogenide is an appropriate replacement of CIGS and CdTe absorberlayers in thin film single junction solar cell as it is composed of all earth abundant andnon-toxic elements and have direct band gaps which varies from 1.0 eV to 1.5 eV withlarge absorption coefficient (~104cm−1). It is originated from CuInS2 by isoelectronicreplacement of indium (In) with zinc (Zn) and tin (Sn) and thus have quite comparableproperties like CuInS2 without the presence of toxic and expensive elements.The main aim of the present research is the fabrication of CZTSSe thin film throughcost-effective and industrially viable solution based non-vacuum dip coatingtechnique using hydrazine free precursor solution to avoid toxicity and any accidentalharms that are possible during the fabrication process.After dip coating of the substrate into the precursor solution, heat treatment of dipcoated CZTS precursor film is needed to form CZTS film. Variation in annealingparameters aids in better control over the composition of individual elements,morphology and crystallinity of kesterite CZTS thin-films. The ratio of Cu:Zn:Sn:Spresent in the precursor film and annealing conditions control the chemical potentialand thus formation enthalpy of CZTS. Chemical potential control is very important incase of kesterite structure owing to narrow thermodynamics window. To achievephase-pure CZTS thin-film, influence of different annealing parameters (temperature,holding time, annealing rate and atmosphere) on formation of CZTS is studied.Optimization of annealing parameters result in the minimization of undesiredviiisecondary phases in the as annealed CZTS films and leads to the formation of uniform,phase-pure CZTS thin film with the required composition through a simple hydrazinefree precursor solution.In addition, controlling the reaction among Cu-Zn-Sn-thiourea precursors in thesolution is also a major concern in formation of phase-pure CZTS. Thus,investigations on effects of addition of amount of stabilizing agent triethanolamine(TEA) on formation of CZTS thin films through dip coating technique have beencarried out. In the proposed work, triethanolamine (TEA) is used as a stabilizing agentin the precursor solution. The purpose of addition of stabilizing agent is to form acomplex molecule with the metallic precursor to inhibit the reaction among them. Asa result, addition of stabilizing agent controls the rate of reaction and also maintainsthe uniformity of the films. But, further addition of higher concentration leads to non-uniformity and secondary phases. Along with this, due to optimization of annealingparameters and concentration of stabilizing agent into the precursor solution,conventional sulfurization step can be avoided and uniform, crystalline films can befabricated by annealing the CZTS precursor film in N2 environment.Furthermore, formation of phase-pure, Zn rich CZTSSe films with S/(S+Se) ~30% byselenization of dip coated CZTS precursor films in presence of elemental Se powderis achieved by incorporation of Se into the film." @default.
• W2895581359 created "2018-10-12" @default.
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• W2895581359 date "2018-01-01" @default.
• W2895581359 modified "2023-09-27" @default.
• W2895581359 title "Dip coating of Cu2ZnSn(SxSe1-x)4 Absorber Layer for Solar Photovoltaic Applications" @default.
• W2895581359 hasPublicationYear "2018" @default.
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