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- W2895681878 abstract "In this paper, buffer-free germanium-tin (GeSn) films on Si(001) grown by molecular beam epitaxy are characterized. GeSn layers show high thermal stability under complementary metal-oxide-semiconductor processing conditions. The experimental results demonstrate that Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.928</sub> Sn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.072</sub> film retains high crystallinity with few misfit dislocations formed at a relaxation degree of 91.5% after post-thermal annealing at 600 °C. Moreover, numerical simulations demonstrate that the proposed photodetector can achieve a high responsivity of 0.102 A/W at 2 μm. This strategy can facilitate the fabrication of GeSn-based devices, which will contribute substantially to the development of group IV-based infrared optoelectronics." @default.
- W2895681878 created "2018-10-12" @default.
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- W2895681878 date "2018-12-01" @default.
- W2895681878 modified "2023-10-15" @default.
- W2895681878 title "Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection" @default.
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- W2895681878 doi "https://doi.org/10.1109/jphot.2018.2873734" @default.
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