Matches in SemOpenAlex for { <https://semopenalex.org/work/W2895719093> ?p ?o ?g. }
- W2895719093 abstract "In this study, we investigated the electrical characteristics of a Hf-based metal/oxide/nitride/oxide/silicon (MONOS) nonvolatile memory (NVM) device formed in situ for the first time. Furthermore, the effects of the in situ HfN gate stack formation process on the electrical characteristics of the Hf-based MONOS device were also investigated by comparing with the device with the Al gate formed ex situ. The drain-current–gate-voltage (I D–V G) characteristics with negligible hysteresis and high yield were realized by using the in situ HfN gate. A memory window (MW) as large as 4.2 V was obtained at the program voltage/time (V PGM/t PGM) of 10 V/1 s and the erase voltage/time (V ERS/t ERS) of −10 V/1 s. Furthermore, the low-voltage and short-pulse operations, such as ±6 V/2 ms were achieved. Finally, 2-bit/cell operation of the Hf-based MONOS device was demonstrated for the first time utilizing electron injection at the source and drain regions." @default.
- W2895719093 created "2018-10-12" @default.
- W2895719093 creator A5020880512 @default.
- W2895719093 creator A5090919175 @default.
- W2895719093 date "2018-10-02" @default.
- W2895719093 modified "2023-09-25" @default.
- W2895719093 title "In situ formation of Hf-based metal/oxide/nitride/oxide/silicon structure for nonvolatile memory application" @default.
- W2895719093 cites W1622909354 @default.
- W2895719093 cites W1670166527 @default.
- W2895719093 cites W1866275669 @default.
- W2895719093 cites W1931699552 @default.
- W2895719093 cites W1965193395 @default.
- W2895719093 cites W1969562914 @default.
- W2895719093 cites W1974047129 @default.
- W2895719093 cites W1988853910 @default.
- W2895719093 cites W1991139959 @default.
- W2895719093 cites W2008916914 @default.
- W2895719093 cites W2045138867 @default.
- W2895719093 cites W2045301862 @default.
- W2895719093 cites W2114594356 @default.
- W2895719093 cites W2121194944 @default.
- W2895719093 cites W2121208764 @default.
- W2895719093 cites W2126918915 @default.
- W2895719093 cites W2140194297 @default.
- W2895719093 cites W2145560386 @default.
- W2895719093 cites W2151654658 @default.
- W2895719093 cites W2166744351 @default.
- W2895719093 cites W2166895322 @default.
- W2895719093 cites W2293151424 @default.
- W2895719093 cites W2773943246 @default.
- W2895719093 cites W2801217088 @default.
- W2895719093 doi "https://doi.org/10.7567/jjap.57.114201" @default.
- W2895719093 hasPublicationYear "2018" @default.
- W2895719093 type Work @default.
- W2895719093 sameAs 2895719093 @default.
- W2895719093 citedByCount "8" @default.
- W2895719093 countsByYear W28957190932019 @default.
- W2895719093 countsByYear W28957190932020 @default.
- W2895719093 countsByYear W28957190932021 @default.
- W2895719093 countsByYear W28957190932022 @default.
- W2895719093 crossrefType "journal-article" @default.
- W2895719093 hasAuthorship W2895719093A5020880512 @default.
- W2895719093 hasAuthorship W2895719093A5090919175 @default.
- W2895719093 hasConcept C119599485 @default.
- W2895719093 hasConcept C121332964 @default.
- W2895719093 hasConcept C123299182 @default.
- W2895719093 hasConcept C127413603 @default.
- W2895719093 hasConcept C165801399 @default.
- W2895719093 hasConcept C171250308 @default.
- W2895719093 hasConcept C172385210 @default.
- W2895719093 hasConcept C177950962 @default.
- W2895719093 hasConcept C178790620 @default.
- W2895719093 hasConcept C185592680 @default.
- W2895719093 hasConcept C191897082 @default.
- W2895719093 hasConcept C192562407 @default.
- W2895719093 hasConcept C194760766 @default.
- W2895719093 hasConcept C199360897 @default.
- W2895719093 hasConcept C2361726 @default.
- W2895719093 hasConcept C26873012 @default.
- W2895719093 hasConcept C2777431650 @default.
- W2895719093 hasConcept C2777822432 @default.
- W2895719093 hasConcept C2779227376 @default.
- W2895719093 hasConcept C2779851234 @default.
- W2895719093 hasConcept C41008148 @default.
- W2895719093 hasConcept C49040817 @default.
- W2895719093 hasConcept C51140833 @default.
- W2895719093 hasConcept C544153396 @default.
- W2895719093 hasConcept C544956773 @default.
- W2895719093 hasConcept C9395851 @default.
- W2895719093 hasConceptScore W2895719093C119599485 @default.
- W2895719093 hasConceptScore W2895719093C121332964 @default.
- W2895719093 hasConceptScore W2895719093C123299182 @default.
- W2895719093 hasConceptScore W2895719093C127413603 @default.
- W2895719093 hasConceptScore W2895719093C165801399 @default.
- W2895719093 hasConceptScore W2895719093C171250308 @default.
- W2895719093 hasConceptScore W2895719093C172385210 @default.
- W2895719093 hasConceptScore W2895719093C177950962 @default.
- W2895719093 hasConceptScore W2895719093C178790620 @default.
- W2895719093 hasConceptScore W2895719093C185592680 @default.
- W2895719093 hasConceptScore W2895719093C191897082 @default.
- W2895719093 hasConceptScore W2895719093C192562407 @default.
- W2895719093 hasConceptScore W2895719093C194760766 @default.
- W2895719093 hasConceptScore W2895719093C199360897 @default.
- W2895719093 hasConceptScore W2895719093C2361726 @default.
- W2895719093 hasConceptScore W2895719093C26873012 @default.
- W2895719093 hasConceptScore W2895719093C2777431650 @default.
- W2895719093 hasConceptScore W2895719093C2777822432 @default.
- W2895719093 hasConceptScore W2895719093C2779227376 @default.
- W2895719093 hasConceptScore W2895719093C2779851234 @default.
- W2895719093 hasConceptScore W2895719093C41008148 @default.
- W2895719093 hasConceptScore W2895719093C49040817 @default.
- W2895719093 hasConceptScore W2895719093C51140833 @default.
- W2895719093 hasConceptScore W2895719093C544153396 @default.
- W2895719093 hasConceptScore W2895719093C544956773 @default.
- W2895719093 hasConceptScore W2895719093C9395851 @default.
- W2895719093 hasLocation W28957190931 @default.
- W2895719093 hasOpenAccess W2895719093 @default.
- W2895719093 hasPrimaryLocation W28957190931 @default.
- W2895719093 hasRelatedWork W1725324460 @default.
- W2895719093 hasRelatedWork W1964677777 @default.