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- W2895770594 abstract "We investigated interfaces in oxides/GaN(0001) by high-resolution scanning transmission electron microscopy (STEM). As a result, it was confirmed that a few-monolayer-thick crystalline intermediate layers with structures lattice-matched to GaN existed in plasma-enhanced atomic layer deposition (PE-ALD)-prepared SiO2/GaN. The STEM images of intermediate layers were quite similar to those of recently reported native oxides on GaN. Moreover, epitaxial layers with ~8% smaller in-plain lattice constants than GaN were observed in thermally oxidized GaN/GaN(0001), some parts of which seemed to be γ-Ga2O3. This suggests that oxidation conditions play a critical role in the formation of structures of these intermediate layers." @default.
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- W2895770594 date "2018-10-02" @default.
- W2895770594 modified "2023-10-16" @default.
- W2895770594 title "Investigation of intermediate layers in oxides/GaN(0001) by electron microscopy" @default.
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- W2895770594 doi "https://doi.org/10.7567/jjap.57.118003" @default.
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