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- W2895816596 abstract "We report on measurements of junction location in Cu(In,Ga)Se <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> (CIGS) solar cells with different window-layer materials by nm-resolution electrical potential/field profiling across the junction using Kelvin probe force microscopy imaging on cross-section of the devices. The results illustrate that the device with a CdS window layer (CdS/CIGS) has a buried homojunction located inside the CIGS absorber with ~40-nm junction depth, whereas the ZnOS/CIGS devices with and without partial electrolyte treatment prior to the window-layer deposition are similar, exhibiting a heterointerface junction. This junction location may contribute in part to the highest efficiency of the CdS/CIGS device among the three devices." @default.
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- W2895816596 date "2019-01-01" @default.
- W2895816596 modified "2023-10-17" @default.
- W2895816596 title "Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se<sub>2</sub> Solar Cells" @default.
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- W2895816596 doi "https://doi.org/10.1109/jphotov.2018.2874039" @default.
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