Matches in SemOpenAlex for { <https://semopenalex.org/work/W2895848458> ?p ?o ?g. }
- W2895848458 endingPage "111003" @default.
- W2895848458 startingPage "111003" @default.
- W2895848458 abstract "This work demonstrates the first nonpolar vertical GaN on GaN pn power diodes grown on m-plane free standing substrates by MOCVD. The SEM and HRXRD results showed the good crystal quality of the homoepitaxial nonpolar structure with low defect densities. The CL result confirmed the nonpolar p GaN was of high quality with considerably reduced deep level states. At forward bias, the device showed good rectifying behaviors with a turn-on voltage of 4.0 V, an on-resistance of 2.3 mohmcm2, and a high on off ratio of 1e10. At reverse bias, the current leakage and breakdown were described by the trap assisted space charge limited current conduction mechanism, where I was proportional to V power 4.5. The critical electrical field was calculated to be 2.0 MV per cm without field plates or edge termination, which is the highest value reported on nonpolar power devices. The high performance m-plane p-n diodes can serve as key building blocks to further develop nonpolar GaN power electronics and polarization-engineering-related advanced power device structures for power conversion applications." @default.
- W2895848458 created "2018-10-26" @default.
- W2895848458 creator A5002569515 @default.
- W2895848458 creator A5006889718 @default.
- W2895848458 creator A5017676844 @default.
- W2895848458 creator A5034495691 @default.
- W2895848458 creator A5035804461 @default.
- W2895848458 creator A5044701017 @default.
- W2895848458 creator A5047638132 @default.
- W2895848458 creator A5055446380 @default.
- W2895848458 creator A5063142307 @default.
- W2895848458 creator A5064530138 @default.
- W2895848458 creator A5073440977 @default.
- W2895848458 creator A5077673589 @default.
- W2895848458 creator A5085154966 @default.
- W2895848458 date "2018-10-16" @default.
- W2895848458 modified "2023-10-16" @default.
- W2895848458 title "Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10bar{1}0)$ <i>m</i>-plane GaN substrates" @default.
- W2895848458 cites W1575377844 @default.
- W2895848458 cites W1578430444 @default.
- W2895848458 cites W1875959771 @default.
- W2895848458 cites W1973701590 @default.
- W2895848458 cites W1974011962 @default.
- W2895848458 cites W1985600998 @default.
- W2895848458 cites W1997540162 @default.
- W2895848458 cites W2008443871 @default.
- W2895848458 cites W2015866014 @default.
- W2895848458 cites W2029146137 @default.
- W2895848458 cites W2045473732 @default.
- W2895848458 cites W2089924165 @default.
- W2895848458 cites W2092387864 @default.
- W2895848458 cites W2093808486 @default.
- W2895848458 cites W2132607122 @default.
- W2895848458 cites W2163194368 @default.
- W2895848458 cites W2191782036 @default.
- W2895848458 cites W2232556391 @default.
- W2895848458 cites W2275658335 @default.
- W2895848458 cites W2343692915 @default.
- W2895848458 cites W2563357427 @default.
- W2895848458 cites W2588456444 @default.
- W2895848458 cites W2588947583 @default.
- W2895848458 cites W2605129768 @default.
- W2895848458 cites W2606224397 @default.
- W2895848458 cites W2606363870 @default.
- W2895848458 cites W2624323421 @default.
- W2895848458 cites W2730945007 @default.
- W2895848458 cites W2733845047 @default.
- W2895848458 cites W2761508163 @default.
- W2895848458 cites W2787555855 @default.
- W2895848458 cites W2788013722 @default.
- W2895848458 cites W2789274637 @default.
- W2895848458 cites W2804038639 @default.
- W2895848458 cites W4233164433 @default.
- W2895848458 doi "https://doi.org/10.7567/apex.11.111003" @default.
- W2895848458 hasPublicationYear "2018" @default.
- W2895848458 type Work @default.
- W2895848458 sameAs 2895848458 @default.
- W2895848458 citedByCount "10" @default.
- W2895848458 countsByYear W28958484582019 @default.
- W2895848458 countsByYear W28958484582020 @default.
- W2895848458 countsByYear W28958484582021 @default.
- W2895848458 countsByYear W28958484582022 @default.
- W2895848458 crossrefType "journal-article" @default.
- W2895848458 hasAuthorship W2895848458A5002569515 @default.
- W2895848458 hasAuthorship W2895848458A5006889718 @default.
- W2895848458 hasAuthorship W2895848458A5017676844 @default.
- W2895848458 hasAuthorship W2895848458A5034495691 @default.
- W2895848458 hasAuthorship W2895848458A5035804461 @default.
- W2895848458 hasAuthorship W2895848458A5044701017 @default.
- W2895848458 hasAuthorship W2895848458A5047638132 @default.
- W2895848458 hasAuthorship W2895848458A5055446380 @default.
- W2895848458 hasAuthorship W2895848458A5063142307 @default.
- W2895848458 hasAuthorship W2895848458A5064530138 @default.
- W2895848458 hasAuthorship W2895848458A5073440977 @default.
- W2895848458 hasAuthorship W2895848458A5077673589 @default.
- W2895848458 hasAuthorship W2895848458A5085154966 @default.
- W2895848458 hasBestOaLocation W28958484582 @default.
- W2895848458 hasConcept C110738630 @default.
- W2895848458 hasConcept C171250308 @default.
- W2895848458 hasConcept C175665537 @default.
- W2895848458 hasConcept C189278905 @default.
- W2895848458 hasConcept C192562407 @default.
- W2895848458 hasConcept C2778871202 @default.
- W2895848458 hasConcept C2779227376 @default.
- W2895848458 hasConcept C49040817 @default.
- W2895848458 hasConcept C78434282 @default.
- W2895848458 hasConceptScore W2895848458C110738630 @default.
- W2895848458 hasConceptScore W2895848458C171250308 @default.
- W2895848458 hasConceptScore W2895848458C175665537 @default.
- W2895848458 hasConceptScore W2895848458C189278905 @default.
- W2895848458 hasConceptScore W2895848458C192562407 @default.
- W2895848458 hasConceptScore W2895848458C2778871202 @default.
- W2895848458 hasConceptScore W2895848458C2779227376 @default.
- W2895848458 hasConceptScore W2895848458C49040817 @default.
- W2895848458 hasConceptScore W2895848458C78434282 @default.
- W2895848458 hasFunder F4320306076 @default.
- W2895848458 hasFunder F4320332276 @default.
- W2895848458 hasIssue "11" @default.