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• W2895850934 abstract "In this study, a co-sputtering method with In2O3 and SiC targets was used to fabricate carbon-doped In-Si-O (In1-xSixO1-yCy) as the channel material for oxide thin-film transistors (TFTs). Three types of In1-xSixO1-yCy channels, namely, In0.88Si0.12O0.99C0.01 (Si0.12C0.01), In0.76Si0.24O0.99C0.01 (Si0.24C0.01), and In0.60Si0.40O0.98C0.02 (Si0.40C0.02), were prepared. After annealing at 300 °C, the Si0.24C0.01 and Si0.40C0.02 films retained an amorphous structure, while the Si0.12C0.01 films exhibited a body-centered-cubic structure. However, all the In1-xSixO1-yCy films maintained a smooth surface with a root-mean-square roughness of approximately 0.28 nm, despite structural differences. Results showed that the conductivities of all the In1-xSixO1-yCy films were not sensitive to the O2 partial pressure during sputtering, indicating that In1-xSixO1-yCy films exhibit more stable electrical conductivity than other InOx-based oxides. The field-effect mobility (μFE) with respect to the Si concentration of In1-xSixO1-yCy and In1-xSixO TFTs showed very similar behavior. In contrast, the threshold voltage (Vth) behavior of the two types varied dramatically, with the In1-xSixO TFTs Vth value increasing drastically from −57.7 to 9.7 V with increasing Si concentration, and the Vth of In1-xSixO1-yCy TFTs increasing only gradually from −9.2 to 2.4 V. This indicates that incorporated carbon has a significant effect on Vth at a low Si concentration due to strong C—O bond formation. The highest bond dissociative energy occurs between O and C atoms in the In1-xSixO1-yCy channel. The amount of oxygen vacancy in Si0.12C0.01, Si0.24C0.01, and Si0.40C0.02 was 18.9%, 13.3%, and 12.9%, respectively. As a result, the Si0.12C0.01 TFT exhibited superior transistor properties of Vth = −9.2 V while maintaining a μFE of 32.4 cm2/Vs. Therefore, an In1-xSixO1-yCy film is significantly advantageous as a channel material for oxide TFTs given that it can result in mobility exceeding 30 cm2/Vs." @default.
• W2895850934 created "2018-10-26" @default.
• W2895850934 creator A5004609434 @default.
• W2895850934 creator A5020777915 @default.
• W2895850934 creator A5028299707 @default.
• W2895850934 creator A5033389809 @default.
• W2895850934 creator A5037784337 @default.
• W2895850934 creator A5058410635 @default.
• W2895850934 creator A5064020117 @default.
• W2895850934 creator A5070528860 @default.
• W2895850934 creator A5088571750 @default.
• W2895850934 date "2018-10-17" @default.
• W2895850934 modified "2023-10-16" @default.
• W2895850934 title "Effect of carbon doping on threshold voltage and mobility of In-Si-O thin-film transistors" @default.
• W2895850934 cites W1415032342 @default.
• W2895850934 cites W1947280227 @default.
• W2895850934 cites W1972973322 @default.
• W2895850934 cites W1974583694 @default.
• W2895850934 cites W1976250511 @default.
• W2895850934 cites W1978810462 @default.
• W2895850934 cites W1979821036 @default.
• W2895850934 cites W1982739165 @default.
• W2895850934 cites W1987111397 @default.
• W2895850934 cites W1993135126 @default.
• W2895850934 cites W1994277498 @default.
• W2895850934 cites W1999589524 @default.
• W2895850934 cites W2004005023 @default.
• W2895850934 cites W2004907704 @default.
• W2895850934 cites W2006733393 @default.
• W2895850934 cites W2010540469 @default.
• W2895850934 cites W2017664626 @default.
• W2895850934 cites W2018540978 @default.
• W2895850934 cites W2021876206 @default.
• W2895850934 cites W2024820221 @default.
• W2895850934 cites W2027748438 @default.
• W2895850934 cites W2030195401 @default.
• W2895850934 cites W2032089942 @default.
• W2895850934 cites W2032902820 @default.
• W2895850934 cites W2033787147 @default.
• W2895850934 cites W2035929342 @default.
• W2895850934 cites W2043477054 @default.
• W2895850934 cites W2053104043 @default.
• W2895850934 cites W2055061721 @default.
• W2895850934 cites W2065305464 @default.
• W2895850934 cites W2071713492 @default.
• W2895850934 cites W2074475688 @default.
• W2895850934 cites W2083011296 @default.
• W2895850934 cites W2085352474 @default.
• W2895850934 cites W2085752393 @default.
• W2895850934 cites W2087515045 @default.
• W2895850934 cites W2093104511 @default.
• W2895850934 cites W2110203233 @default.
• W2895850934 cites W2112011821 @default.
• W2895850934 cites W2114776920 @default.
• W2895850934 cites W2131716975 @default.
• W2895850934 cites W2172096683 @default.
• W2895850934 cites W2334964755 @default.
• W2895850934 cites W2335434111 @default.
• W2895850934 cites W2626483510 @default.
• W2895850934 cites W2791606447 @default.
• W2895850934 doi "https://doi.org/10.1116/1.5039665" @default.
• W2895850934 hasPublicationYear "2018" @default.
• W2895850934 type Work @default.
• W2895850934 sameAs 2895850934 @default.
• W2895850934 citedByCount "5" @default.
• W2895850934 countsByYear W28958509342019 @default.
• W2895850934 countsByYear W28958509342020 @default.
• W2895850934 countsByYear W28958509342023 @default.
• W2895850934 crossrefType "journal-article" @default.
• W2895850934 hasAuthorship W2895850934A5004609434 @default.
• W2895850934 hasAuthorship W2895850934A5020777915 @default.
• W2895850934 hasAuthorship W2895850934A5028299707 @default.
• W2895850934 hasAuthorship W2895850934A5033389809 @default.
• W2895850934 hasAuthorship W2895850934A5037784337 @default.
• W2895850934 hasAuthorship W2895850934A5058410635 @default.
• W2895850934 hasAuthorship W2895850934A5064020117 @default.
• W2895850934 hasAuthorship W2895850934A5070528860 @default.
• W2895850934 hasAuthorship W2895850934A5088571750 @default.
• W2895850934 hasConcept C106782819 @default.
• W2895850934 hasConcept C107365816 @default.
• W2895850934 hasConcept C113196181 @default.
• W2895850934 hasConcept C119599485 @default.
• W2895850934 hasConcept C127413603 @default.
• W2895850934 hasConcept C159985019 @default.
• W2895850934 hasConcept C165801399 @default.
• W2895850934 hasConcept C171250308 @default.
• W2895850934 hasConcept C172385210 @default.
• W2895850934 hasConcept C185592680 @default.
• W2895850934 hasConcept C19067145 @default.
• W2895850934 hasConcept C192562407 @default.
• W2895850934 hasConcept C195370968 @default.
• W2895850934 hasConcept C22423302 @default.
• W2895850934 hasConcept C2777855556 @default.
• W2895850934 hasConcept C2779227376 @default.
• W2895850934 hasConcept C43617362 @default.
• W2895850934 hasConcept C49040817 @default.
• W2895850934 hasConcept C56052488 @default.
• W2895850934 hasConcept C57863236 @default.
• W2895850934 hasConcept C8010536 @default.
• W2895850934 hasConcept C87359718 @default.

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