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- W2895858390 abstract "Enhancement mode 4H-SiC MOSFETs with a channel length of 2 μm achieved a room temperature field effect mobility of 125 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V·s and a subthreshold slope of 130 mV/dec. The devices demonstrated a remarkable temperature stability up to 300 °C, remaining enhancement mode with high mobility and an ON/OFF current ratio in excess of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>6</sup> . The fabricated devices utilised a gate stack comprising a 0.7 nm thin thermal SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> , thereby reducing defects following oxidation, and a 40 nm thick Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> formed by atomic layer deposition. A high mobility was maintained over a wide gate voltage range." @default.
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- W2895858390 date "2018-09-01" @default.
- W2895858390 modified "2023-09-26" @default.
- W2895858390 title "High Mobility 4H-SiC MOSFET Using a Thin SiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> Gate Stack" @default.
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- W2895858390 doi "https://doi.org/10.1109/essderc.2018.8486896" @default.
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