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• W2895913908 abstract "Abstract The unintentional formation of a Cu depletion layer (CDL) on the surface of Cu(In,Ga)Se 2 was observed in 1993, and CDLs have been expected to improve the performance of Cu(In,Ga)Se 2 solar cells. However, methods of controlling CDLs have hitherto been unavailable. For the first time, we succeeded in controlling a uniform CDL on a Cu(In,Ga)Se 2 surface by introducing irradiation with Se into the typical three‐stage growth process of Cu(In,Ga)Se 2 . We discuss the characterization and effects on device performance of CDLs. A uniform, smooth CDL with a thickness of 200 nm was formed at a Se irradiation time of 5 minutes, whereas the CDL formed at an irradiation time of 10 minutes was rough and non‐uniform. A maximum efficiency of 19.8% was achieved at an irradiation time of 5 minutes via the formation of a complete CDL. This simple, unique method may help to maximize efficiency of Cu(In,Ga)Se 2 solar cells." @default.
• W2895913908 created "2018-10-26" @default.
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• W2895913908 date "2018-10-12" @default.
• W2895913908 modified "2023-10-05" @default.
• W2895913908 title "Accurate control and characterization of Cu depletion layer for highly efficient Cu(In,Ga)Se₂solar cells" @default.
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• W2895913908 doi "https://doi.org/10.1002/pip.3077" @default.
• W2895913908 hasPublicationYear "2018" @default.
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