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• W2895974735 abstract "In this work, we present a physics-based model for a two-dimensional electron gas (2-DEG) density at heterointerface in AlGaN/GaN high electron mobility transistor (HEMT). One-dimensional Schrödinger-Poisson equations are solved self-consistently using a nonuniform mesh within the framework of the nextnano device simulation software. The 2-DEG density of AlGaN/GaN HEMT is investigated through the dependence of electron concentrations on various structural parameters such as barrier layer thickness, doping concentration, and the Al content. We report calculations of gate capacitance from charge density characteristics with respect to gate voltage. Good agreement between calculation and experiment is found." @default.
• W2895974735 created "2018-10-26" @default.
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• W2895974735 date "2018-10-19" @default.
• W2895974735 modified "2023-09-27" @default.
• W2895974735 title "Optimization of two-dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors" @default.
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• W2895974735 doi "https://doi.org/10.1002/jnm.2518" @default.
• W2895974735 hasPublicationYear "2018" @default.
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