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• W2896037689 endingPage "1803465" @default.
• W2896037689 startingPage "1803465" @default.
• W2896037689 abstract "Atomic thin transition-metal dichalcogenides (TMDs) are considered as an emerging platform to build next-generation semiconductor devices. However, to date most devices are still based on exfoliated TMD sheets on a micrometer scale. Here, a novel chemical vapor deposition synthesis strategy by introducing multilayer (ML) MoS2 islands to improve device performance is proposed. A four-probe method is applied to confirm that the contact resistance decreases by one order of magnitude, which can be attributed to a conformal contact by the extra amount of exposed edges from the ML-MoS2 islands. Based on such continuous MoS2 films synthesized on a 2 in. insulating substrate, a top-gated field effect transistor (FET) array is fabricated to explore key metrics such as threshold voltage (V T ) and field effect mobility (μFE ) for hundreds of MoS2 FETs. The statistical results exhibit a surprisingly low variability of these parameters. An average effective μFE of 70 cm2 V-1 s-1 and subthreshold swing of about 150 mV dec-1 are extracted from these MoS2 FETs, which are comparable to the best top-gated MoS2 FETs achieved by mechanical exfoliation. The result is a key step toward scaling 2D-TMDs into functional systems and paves the way for the future development of 2D-TMDs integrated circuits." @default.
• W2896037689 created "2018-10-26" @default.
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• W2896037689 date "2018-10-16" @default.
• W2896037689 modified "2023-10-16" @default.
• W2896037689 title "High-Performance Wafer-Scale MoS₂ Transistors toward Practical Application" @default.
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• W2896037689 doi "https://doi.org/10.1002/smll.201803465" @default.
• W2896037689 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/30328296" @default.
• W2896037689 hasPublicationYear "2018" @default.
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