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• W2896097444 endingPage "114" @default.
• W2896097444 startingPage "105" @default.
• W2896097444 abstract "Abstract Vertical aligned GaN nanowall networks (NWN) have been grown on sapphire (0 0 0 1) substrates using laser assisted molecular beam epitaxy (LMBE) by tuning the sapphire pre-nitridation temperature (200–600 °C). Field emission scanning electron microscopy studies showed the formation of hexagonal shaped vertical GaN NWN with wall width of 8–20 nm on high temperature (600 °C) nitridated sapphire whereas flower shape granular GaN structure with grain size of 50–240 nm was obtained on low temperature (200 °C) nitridated sapphire. The crystalline properties of the GaN NWN have been studied using high resolution X-ray diffraction (HR-XRD). The results show that the full width at half maximum of the GaN(0 0 0 2) X-ray rocking curve has a relatively low value compared to previous reports of hetero-epitaxial grown GaN NWN on sapphire and other substrates. Raman spectroscopy measurements revealed the presence of compressive stress in film whereas tensile stress in GaN NWN structures which is also complimented by HR-XRD analysis. The room temperature photoluminescence spectroscopy measurement for NWN having tip width 8–20 nm showed a 94 meV blue-shift in near band edge emission, even though NWN experienced with tensile stress, which confirm the observation of quantum size effect. The hetero-epitaxial growth of porous GaN NWN with high crystalline quality holds promise for applications in field of nitride based sensors and the enhancement of light extraction efficiency in optoelectronics devices." @default.
• W2896097444 created "2018-10-26" @default.
• W2896097444 creator A5004813547 @default.
• W2896097444 creator A5015818852 @default.
• W2896097444 creator A5017179758 @default.
• W2896097444 creator A5030786917 @default.
• W2896097444 creator A5078436673 @default.
• W2896097444 creator A5086714072 @default.
• W2896097444 creator A5088947479 @default.
• W2896097444 date "2018-05-01" @default.
• W2896097444 modified "2023-10-09" @default.
• W2896097444 title "Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0 0 0 1) grown by laser MBE" @default.
• W2896097444 cites W1608457091 @default.
• W2896097444 cites W1670938987 @default.
• W2896097444 cites W1965138096 @default.
• W2896097444 cites W1966537667 @default.
• W2896097444 cites W1966826757 @default.
• W2896097444 cites W1967421943 @default.
• W2896097444 cites W1968591145 @default.
• W2896097444 cites W1974404466 @default.
• W2896097444 cites W1975857981 @default.
• W2896097444 cites W1982037331 @default.
• W2896097444 cites W1983112843 @default.
• W2896097444 cites W1997049756 @default.
• W2896097444 cites W2000459638 @default.
• W2896097444 cites W2002831858 @default.
• W2896097444 cites W2004280018 @default.
• W2896097444 cites W2005037605 @default.
• W2896097444 cites W2012100581 @default.
• W2896097444 cites W2018750909 @default.
• W2896097444 cites W2018903431 @default.
• W2896097444 cites W2019894263 @default.
• W2896097444 cites W2027752514 @default.
• W2896097444 cites W2028411031 @default.
• W2896097444 cites W2035091627 @default.
• W2896097444 cites W2037236899 @default.
• W2896097444 cites W2042916342 @default.
• W2896097444 cites W2044690517 @default.
• W2896097444 cites W2047055173 @default.
• W2896097444 cites W2047502926 @default.
• W2896097444 cites W2048454557 @default.
• W2896097444 cites W2051958619 @default.
• W2896097444 cites W2054361474 @default.
• W2896097444 cites W2059310165 @default.
• W2896097444 cites W2060252319 @default.
• W2896097444 cites W2071827728 @default.
• W2896097444 cites W2074796258 @default.
• W2896097444 cites W2076953987 @default.
• W2896097444 cites W2086892231 @default.
• W2896097444 cites W2087656599 @default.
• W2896097444 cites W2092270129 @default.
• W2896097444 cites W2092323797 @default.
• W2896097444 cites W2110493549 @default.
• W2896097444 cites W2115393493 @default.
• W2896097444 cites W2122173114 @default.
• W2896097444 cites W2125281842 @default.
• W2896097444 cites W2126743428 @default.
• W2896097444 cites W2130159633 @default.
• W2896097444 cites W2135366319 @default.
• W2896097444 cites W2177748691 @default.
• W2896097444 cites W2202994029 @default.
• W2896097444 cites W2234249668 @default.
• W2896097444 cites W2333454074 @default.
• W2896097444 cites W2403753279 @default.
• W2896097444 cites W2418606752 @default.
• W2896097444 cites W2520274776 @default.
• W2896097444 cites W2583284940 @default.
• W2896097444 cites W2586438210 @default.
• W2896097444 cites W2588766072 @default.
• W2896097444 cites W2611328983 @default.
• W2896097444 cites W2963726756 @default.
• W2896097444 doi "https://doi.org/10.1016/j.mseb.2018.10.009" @default.
• W2896097444 hasPublicationYear "2018" @default.
• W2896097444 type Work @default.
• W2896097444 sameAs 2896097444 @default.
• W2896097444 citedByCount "12" @default.
• W2896097444 countsByYear W28960974442019 @default.
• W2896097444 countsByYear W28960974442020 @default.
• W2896097444 countsByYear W28960974442021 @default.
• W2896097444 countsByYear W28960974442022 @default.
• W2896097444 crossrefType "journal-article" @default.
• W2896097444 hasAuthorship W2896097444A5004813547 @default.
• W2896097444 hasAuthorship W2896097444A5015818852 @default.
• W2896097444 hasAuthorship W2896097444A5017179758 @default.
• W2896097444 hasAuthorship W2896097444A5030786917 @default.
• W2896097444 hasAuthorship W2896097444A5078436673 @default.
• W2896097444 hasAuthorship W2896097444A5086714072 @default.
• W2896097444 hasAuthorship W2896097444A5088947479 @default.
• W2896097444 hasConcept C110738630 @default.
• W2896097444 hasConcept C120665830 @default.
• W2896097444 hasConcept C121332964 @default.
• W2896097444 hasConcept C171250308 @default.
• W2896097444 hasConcept C175665537 @default.
• W2896097444 hasConcept C192562407 @default.
• W2896097444 hasConcept C2779227376 @default.
• W2896097444 hasConcept C2780064504 @default.
• W2896097444 hasConcept C49040817 @default.
• W2896097444 hasConcept C520434653 @default.

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