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• W2896207817 abstract "In this paper, the reaction rate of oxygen vacancy ( $text{V}_{mathrm{ O}}$ ) by the derivatives of threshold voltage ( ${V}$ th) in the amorphous indium–gallium–zinc oxide thin-film transistors under light pulses with altering duty ratios is investigated. More importantly, after collecting and analyzing a lot of experimental results, a comprehensive model named $text{V}_{mathrm{ O}}$ pool is proposed. The proposed model can more universally describe the characteristic of $text{V}_{mathrm{ O}}$ reacting to the light and its degradation behavior under various kinds of stress condition." @default.
• W2896207817 created "2018-10-26" @default.
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• W2896207817 date "2019-01-01" @default.
• W2896207817 modified "2023-09-27" @default.
• W2896207817 title "The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors" @default.
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• W2896207817 doi "https://doi.org/10.1109/jeds.2018.2875930" @default.
• W2896207817 hasPublicationYear "2019" @default.
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