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• W2896322716 abstract "Phase change memory has been considered as the next generation in non-volatile electronic data storage. The property modulation of such materials by the doping of rare-earth elements has drawn a lot of attention, which motivates us to search for the optimal dopants and reveal the underlying mechanisms. Here, we investigate the role of Gd as a dopant in Ge2Sb2Te5, which exhibits higher crystalline resistance and better thermal stability and antioxidant capacity than the undoped counterpart. Moreover, Gd dopants suppress both the processes of phase transition and grain growth. The crystalline structure remains unchanged with Gd dopants and vacancies are randomly distributed. Furthermore, the bonding mechanism was theoretically investigated. In the amorphous state, Gd atoms modify the local structures around Ge, Sb, and Te atoms. The large coordination number of Gd and the “Gd–Te distorted pentagonal bipyramidal-like” structure can be attributed to the good thermal stability. These microscopic findings figure out some of the key issues about the bonding mechanism, electrical properties, and crystallization behaviors of Gd doped phase change memory materials, which could be useful for storage devices." @default.
• W2896322716 created "2018-10-26" @default.
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• W2896322716 date "2018-10-14" @default.
• W2896322716 modified "2023-10-16" @default.
• W2896322716 title "Electrical properties and structural transition of <i>Ge₂Sb₂Te₅</i> adjusted by rare-earth element <i>Gd</i> for nonvolatile phase-change memory" @default.
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• W2896322716 doi "https://doi.org/10.1063/1.5040988" @default.
• W2896322716 hasPublicationYear "2018" @default.
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