Matches in SemOpenAlex for { <https://semopenalex.org/work/W2896331379> ?p ?o ?g. }
- W2896331379 endingPage "5328" @default.
- W2896331379 startingPage "5322" @default.
- W2896331379 abstract "In this paper, the effects of repetitively transient overcurrent on the long-term reliability of commercial p-GaN high-electron-mobility-transistors (HEMTs) are investigated by using RLC pulse-ring-down tests. The devices rated for 650 V/30 A are electrically stressed by peak pulse currents of 90 A, corresponding to 3× of the given rating. It is found that the device ON-state resistance(RON) increases by about 20.7% for the device pulsed 500000 times. The measured results reveal that the reason for the increase in RON is the traps caused by thermal stress concentration during repetitive pulse process. Furthermore, for the device pulsed with larger than 500000 times, a conductive path is formed through passivation layer because of trap accumulation, which results in a saturation trend in RON and a remarkably increase in the drain leakage current (IDL). However, the high peak currents and large pulse numbers required to produce severe degeneration demonstrate the GaN-based HEMTs have a promising long-term reliability in power switching applications that are susceptible to pulse overcurrent." @default.
- W2896331379 created "2018-10-26" @default.
- W2896331379 creator A5001978013 @default.
- W2896331379 creator A5002790754 @default.
- W2896331379 creator A5014894358 @default.
- W2896331379 creator A5028296024 @default.
- W2896331379 creator A5032884063 @default.
- W2896331379 creator A5033683898 @default.
- W2896331379 creator A5039315799 @default.
- W2896331379 creator A5051493168 @default.
- W2896331379 creator A5075299794 @default.
- W2896331379 creator A5083817678 @default.
- W2896331379 creator A5085162950 @default.
- W2896331379 creator A5088412694 @default.
- W2896331379 creator A5088558453 @default.
- W2896331379 date "2018-12-01" @default.
- W2896331379 modified "2023-10-16" @default.
- W2896331379 title "Investigation on the Long-Term Reliability of High-Voltage p-GaN HEMT by Repetitively Transient Overcurrent" @default.
- W2896331379 cites W1541034142 @default.
- W2896331379 cites W1816108333 @default.
- W2896331379 cites W1976230910 @default.
- W2896331379 cites W1978424540 @default.
- W2896331379 cites W1983627056 @default.
- W2896331379 cites W2002154491 @default.
- W2896331379 cites W2008443871 @default.
- W2896331379 cites W2022941862 @default.
- W2896331379 cites W2028992594 @default.
- W2896331379 cites W2031318739 @default.
- W2896331379 cites W2032301841 @default.
- W2896331379 cites W2040908296 @default.
- W2896331379 cites W2061788622 @default.
- W2896331379 cites W2088351781 @default.
- W2896331379 cites W2098332983 @default.
- W2896331379 cites W2099601297 @default.
- W2896331379 cites W2124543489 @default.
- W2896331379 cites W2147584503 @default.
- W2896331379 cites W2196607902 @default.
- W2896331379 cites W2240174950 @default.
- W2896331379 cites W2580496947 @default.
- W2896331379 cites W2584889330 @default.
- W2896331379 cites W2587593571 @default.
- W2896331379 cites W2592901630 @default.
- W2896331379 cites W2593495332 @default.
- W2896331379 cites W2598534071 @default.
- W2896331379 cites W2621054320 @default.
- W2896331379 cites W2707943909 @default.
- W2896331379 cites W2738119419 @default.
- W2896331379 cites W2738372250 @default.
- W2896331379 cites W2774384636 @default.
- W2896331379 cites W2786197704 @default.
- W2896331379 doi "https://doi.org/10.1109/ted.2018.2873802" @default.
- W2896331379 hasPublicationYear "2018" @default.
- W2896331379 type Work @default.
- W2896331379 sameAs 2896331379 @default.
- W2896331379 citedByCount "15" @default.
- W2896331379 countsByYear W28963313792019 @default.
- W2896331379 countsByYear W28963313792020 @default.
- W2896331379 countsByYear W28963313792021 @default.
- W2896331379 countsByYear W28963313792022 @default.
- W2896331379 countsByYear W28963313792023 @default.
- W2896331379 crossrefType "journal-article" @default.
- W2896331379 hasAuthorship W2896331379A5001978013 @default.
- W2896331379 hasAuthorship W2896331379A5002790754 @default.
- W2896331379 hasAuthorship W2896331379A5014894358 @default.
- W2896331379 hasAuthorship W2896331379A5028296024 @default.
- W2896331379 hasAuthorship W2896331379A5032884063 @default.
- W2896331379 hasAuthorship W2896331379A5033683898 @default.
- W2896331379 hasAuthorship W2896331379A5039315799 @default.
- W2896331379 hasAuthorship W2896331379A5051493168 @default.
- W2896331379 hasAuthorship W2896331379A5075299794 @default.
- W2896331379 hasAuthorship W2896331379A5083817678 @default.
- W2896331379 hasAuthorship W2896331379A5085162950 @default.
- W2896331379 hasAuthorship W2896331379A5088412694 @default.
- W2896331379 hasAuthorship W2896331379A5088558453 @default.
- W2896331379 hasConcept C111919701 @default.
- W2896331379 hasConcept C119599485 @default.
- W2896331379 hasConcept C121332964 @default.
- W2896331379 hasConcept C127413603 @default.
- W2896331379 hasConcept C129014197 @default.
- W2896331379 hasConcept C155891486 @default.
- W2896331379 hasConcept C159985019 @default.
- W2896331379 hasConcept C162057924 @default.
- W2896331379 hasConcept C163258240 @default.
- W2896331379 hasConcept C165801399 @default.
- W2896331379 hasConcept C172385210 @default.
- W2896331379 hasConcept C192562407 @default.
- W2896331379 hasConcept C2779227376 @default.
- W2896331379 hasConcept C2780167933 @default.
- W2896331379 hasConcept C2780799671 @default.
- W2896331379 hasConcept C33574316 @default.
- W2896331379 hasConcept C41008148 @default.
- W2896331379 hasConcept C43214815 @default.
- W2896331379 hasConcept C47949032 @default.
- W2896331379 hasConcept C49040817 @default.
- W2896331379 hasConcept C62520636 @default.
- W2896331379 hasConceptScore W2896331379C111919701 @default.
- W2896331379 hasConceptScore W2896331379C119599485 @default.
- W2896331379 hasConceptScore W2896331379C121332964 @default.