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- W2896461804 abstract "Abstract Zn1-xCdxO films with different Cd contents obtained by controlling the growth oxygen pressure (Op) were deposited on both c-sapphire (Al2O3) substrates and p-GaN substrates, by means of the pulsed laser deposition (PLD) method. Photoluminescence (PL) measurement revealed that the variation of Op influenced the amount of Cd doping into Zn1-xCdxO films deposited on Al2O3, leading tunable luminescence from the ultraviolet (UV) to blue emission extended to the green band. Then all the fabricated n-Zn1-xCdxO/p-GaN heterojunction possessed good ohmic contacts and exhibited typical rectifying characteristic of the diode. Indeed, the high luminescence from the ZnCdO layer could be attained by inserting a MgO insulator to the heterojunction interface. The fabrication of tunable n-Zn1-xCdxO/p-GaN heterojunction light-emitting diodes is available which was supported by the results of electroluminescence (EL) experiment." @default.
- W2896461804 created "2018-10-26" @default.
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- W2896461804 date "2019-03-01" @default.
- W2896461804 modified "2023-10-17" @default.
- W2896461804 title "Fabrication of tunable n-Zn1-xCdxO/p-GaN heterojunction light-emitting diodes" @default.
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- W2896461804 doi "https://doi.org/10.1016/j.jallcom.2018.10.244" @default.
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