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- W2896463130 abstract "Vanadium dioxide (VO 2 ) exhibits a metal-insulator transition (MIT) near 68°C with a unique sharp resistivity change. Below this temperature, it behaves as a semiconductor with a high electrical resistivity, above it the material behaves as a metal with a low electrical resistivity. In this paper, modeling and FEM simulation using Comsol Multiphysics of metal-insulator transition behavior in VO 2 /Au thin film have been carried out in order to evaluate the electrical resistance behavior as a function of applied voltage and temperature sweeps. The simulation results present a similar transition behavior as in experiments owning a good sensitivity even at room temperature under a specific voltage. In addition, these simulations could be of a great interest to design potential sensors based on this transition metal oxide materials thin layer. The simulation results could be used as a powerful design tool for several MIT-based sensors and predict the feasibility of a variety of device with a high sensitivity at ambient temperature. Our simulations predict a transition at room-temperature under polarization of about $4.25mathrm{V}$ . Practically, in term of operating temperature range many applications are targeted going from data storage device to biosensors." @default.
- W2896463130 created "2018-10-26" @default.
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- W2896463130 date "2018-08-01" @default.
- W2896463130 modified "2023-09-27" @default.
- W2896463130 title "Modeling and Simulation of VO<inf>2</inf>/Au Thin Film Transition Behavior" @default.
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- W2896463130 doi "https://doi.org/10.1109/smelec.2018.8481217" @default.
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