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- W2896465740 abstract "Abstract This paper reports the first-ever results obtained during laser metal deposition (LMD) of Bi2Se3 and Bi2Te3, assisting to develop semiconducting and thermoelectric materials (recently finding the applications as Topological Insulators) through additive manufacturing. Bismuth-based chalcogenides, Bi2Se3 and Bi2Te3, are deposited on an Aluminum 6061 substrate using laser metal deposition process (LMD) and are heat-treated at 400 °C for 4 h under Argon gas. The microstructural characterization of the as-deposited and heat-treated samples of Bi2Se3 and Bi2Te3 are investigated using a scanning electron microscope and electron dispersive spectroscopy. Thereafter, the corresponding phases (along with the Miller indices and lattice parameters of individual phases) are identified with X-ray diffraction method. The asymmetric elemental evaporation of Se and Te are observed in Bi2Se3 and Bi2Te3, respectively, during the LMD process. This results in a change of overall composition with the formation of uncommon phases along with Bi-rich phases. After the heat-treatment process, these Bi-rich phases are disappeared, and the dissolution of these peaks are observed in the XRD analysis." @default.
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- W2896465740 date "2019-02-01" @default.
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- W2896465740 title "Microstructural evolution during laser metal deposition of bismuth chalcogenides (Bi2Se3 and Bi2Te3)" @default.
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- W2896465740 doi "https://doi.org/10.1016/j.jallcom.2018.10.063" @default.
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