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- W2896488364 abstract "Surface crystallization processes in the 80GeSe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -20Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> Se <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> chalcogenide glasses annealed at 380 °C for 25 h and 80 h were studied using atomic force microscopy method. It is shown that crystallites of GeSe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> phase are formed in the crystallized glasses on the surface. Optimal conditions of crystallization process were selected for preparation of glasses for IR photonics and sensor electronics." @default.
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- W2896488364 date "2018-04-01" @default.
- W2896488364 modified "2023-09-27" @default.
- W2896488364 title "Analysis of Crystallization Processes on the Surface of Ge-Ga-Se Glasses for Electronics and IR Photonics" @default.
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- W2896488364 doi "https://doi.org/10.1109/elnano.2018.8477471" @default.
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