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• W289654009 abstract "Abstract : In this paper, we report on the growth and characterization of single crystal GaMnN thin films and p-i-n junction devices grown by metal-organic chemical vapor deposition (MOCVD). Single crystal GaMnN films were achieved by optimizing the growth temperature, growth rate and the Mn:Ga gas phase ratio. A growth window for obtaining single crystal Ga(sub 1-x)Mn(sub x)N with 0.006=<x=<0.023 was found within a temperature range of 850 degree C<T(sub G)<1040 degree C, as determined by transmission electron microscopy. Temperature dependent superconducting quantum interference device (SQUID) measurements confirmed the absence of superparamagnetism and spin glass behavior within the films and identified Curie temperatures between 228K and 500K for GaMnN." @default.
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• W289654009 date "2004-12-01" @default.
• W289654009 modified "2023-09-24" @default.
• W289654009 title "Magnetic and Optical Properties of MN-Doped GaN Thin Films and P-I-N Devices" @default.
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• W289654009 hasPublicationYear "2004" @default.
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