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• W2896574369 abstract "In nonvolatile resistive memory and neuromorphic computing, the formation and rupture of a conductive filament after the forming process causes a reversible resistance transition between low- and high-resistance states. We confirm herein that conductance fluctuations by sweeping the applied voltage before and after “semi-forming” appear in Pt/NiO/Pt resistive switching cells through an investigation of nonpolar resistive transitions after semi-forming and “second forming.” The increase in conductance owing to conductance fluctuations originates from the modification of oxygen-vacancy densities at grain boundaries in the NiO layer. Moreover, this modification may disappear at 470 K. The influence of a significant Joule heating caused by current through a fat filament created by second forming determines whether the cell conductance after the reset takes on the value of the conductance just after second forming or that of the initial conductance. Thus, Joule heating seems to be the driving force behind the reset in Pt/NiO/Pt cells." @default.
• W2896574369 created "2018-10-26" @default.
• W2896574369 creator A5042754568 @default.
• W2896574369 creator A5045516319 @default.
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• W2896574369 date "2018-10-16" @default.
• W2896574369 modified "2023-10-18" @default.
• W2896574369 title "Conductance fluctuation in NiO-based resistive switching memory" @default.
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• W2896574369 doi "https://doi.org/10.1063/1.5037486" @default.
• W2896574369 hasPublicationYear "2018" @default.
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