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- W2896595561 abstract "The recent emergence of free-standing GaN substrate has enabled the development of vertical GaN-on-GaN power devices. This letter presents the dynamic ON-resistance (RON) and reverse recovery performance of a novel vertical GaN-on-GaN Schottky barrier diode (SBD) characterized by a double pulse tester. The vertical GaN-on-GaN SBD exhibits fast reverse recovery with a low RON·Qrr figure-of-merit. For the first time, the current-collapse-free performance (i.e., no dynamic RON degradation) has been experimentally verified in a vertical GaN power rectifier under different switching conditions including: OFF-state stress bias up to 500 V, OFF-state stress time within 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-6</sup> -10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> s, high temperature up to 150 °C, and different load current levels." @default.
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- W2896595561 date "2019-06-01" @default.
- W2896595561 modified "2023-09-23" @default.
- W2896595561 title "Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode" @default.
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- W2896595561 doi "https://doi.org/10.1109/tpel.2018.2876444" @default.
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