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- W2896740023 abstract "We report on extreme penetration power of relativistic electrons in a micrometer-thick gallium nitride epitaxial film and its application to probing threading dislocations, which were introduced during crystal growth. Maximum usable thickness of the specimen was quantitatively evaluated using high-voltage transmission electron microscopy (TEM) operating at 1 MV. The width of dislocation images was used as a measure for the evaluation of usable thickness. Superior maximum usable thickness was obtained in scanning transmission electron microscopy (STEM) than in TEM mode; the results were 6.9 μm for STEM and 4.4 μm for TEM. In STEM, dislocations can be imaged with an almost constant width of 15–20 nm in a wide thickness range 1–4 μm. The latest high-voltage STEM is thus useful for observing dislocations in micrometer-thick inorganic materials." @default.
- W2896740023 created "2018-10-26" @default.
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- W2896740023 date "2018-10-18" @default.
- W2896740023 modified "2023-10-12" @default.
- W2896740023 title "Probing Crystal Dislocations in a Micrometer-Thick GaN Film by Modern High-Voltage Electron Microscopy" @default.
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- W2896740023 doi "https://doi.org/10.1021/acsomega.8b02078" @default.
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