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- W2896770763 abstract "The heterostructure n-ZnO/p-Si was fabricated by Radio Frequency Sputtering. The photodiode characteristics were obtained from current-voltage curves. The photovoltaic effect and photodiode sensitivity were measured by transient photo-current, both under UV-Light and VIS-Light. The results show a well define rectification character, the relation between current at forward bias and reverse bias was about two orders of magnitude. The photovoltaic effect was observed for UV and Vis light; the photodiode presents a higher sensitivity for Vis light than for UV light. The transient-photocurrent was recorded at a different voltage (−2, −1 and 0 V) under Vis and UV light. The photo-response for UV and Vis light at −1 V were 1.71 mA/W and 9.35 mA/W and for 0 V were 0.62 mA/W and 0.70 mA/W respectively." @default.
- W2896770763 created "2018-10-26" @default.
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- W2896770763 date "2019-01-01" @default.
- W2896770763 modified "2023-09-26" @default.
- W2896770763 title "Development and characterization of photodiode n-ZnO/p-Si by Radio Frecuency Sputtering, a sensor with low voltage operation and its response to visible and UV light" @default.
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- W2896770763 doi "https://doi.org/10.1016/j.tsf.2018.10.002" @default.
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